Refractive Index of GaAs, Gallium Arsenide

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III/V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows.

For a typical sample of GaAs the refractive index and extinction coefficient at 632.8 nm are 3.85744 and 0.1983491. Below are files of complete refractive index and extinction coefficients. If the file is not available for download, you can request our proprietary file by clicking "Request".

Refractive Index Reference - J. B. Theeten, D. E. Aspnes, and R. P. H. Chang, J. Appl. Phys. 49, 6097 (1978)

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