Refractive Index of InAs, Indium Arsenide
Indium arsenide, InAs, or indium monoarsenide, is a semiconductor material, a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals and is used for construction of infrared detectors, for the wavelength range of 1-3.8 µm. The detectors are usually photovoltaic photodiodes.
For a typical sample of InAs the refractive index and extinction coefficient at 632.8 nm are 3.963 and 0.607. Below are files of complete refractive index and extinction coefficients. If the file is not available for download, you can request our proprietary file by clicking "Request".
- Tab-delimited data file for unrestricted use
Refractive Index Reference - D. E. Aspnes and A. A. Studna, Phys. Rev. B 27 985 (1983)
D. E. Aspnes and A. A. Studna (1983) "Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV" Phys. Rev. B 27, 9851009 doi: 10.1103/PhysRevB.27.985
No guarantee of accuracy - use at your own risk.